Professor of Polish Academy of Sciences. Expert in semiconductors and crystal growth technologies with particular focus on gallium nitride crystals. VP of TopGaN Lasers Ltd., a company producing GaN-based violet and blue laser diodes for special applications Quantum Technologies, telecom, industry. Leader of dozens of R&D projects and work packages funded by national and EU sources. Evaluated cca 100 international grant proposals. Supervised 7 PhD students and evaluated 15 PhD dissertations. Author of 350+ publications cited about 5000 times (Hirsch factor 32 to 38).

Academic

• Professor of Polish Academy of Sciences 2004.
• Habilitation 1996 Institute of Physics Polish Academy of Sciences (Microstructure of III-N compounds)
• PhD 1990 Institute of Physics Polish Academy of Science (Lattice parameters of III-V compounds as a function of temperature and illumination)
• MSci 1980 Physics Dept of Warsaw University (X-ray topography of Si crystals after high pressure treatment).

Professional experience

• 2001 - up to now, vice president of TopGaN, spin off from Unipress, responsible for R&D activity,
• 1997 - 2005 - advisor for Philips Analytical,
• 1996 - visiting professor at Center of Atomic Energy (CEA) Grenoble (France),
• 1990 - 92, post-doc at Intitute of Theoretical Physics Trieste (Italy) and at Institute of Advanced Materials Brindisi (Italy),
• 1980 - up to now, Institute of High-Pressure Physics UNIPRESS.

Scientific activity

• 2000 - up to now: leader of Semiconductor Microstructure Lab, examinations of microstructural properties of AlGaInN layers and quantum structures as a function of MOVPE growth conditions and relating these properties to the optical and electrical parameters which are important for functioning of nitride laser diodes (UV/blue/green) and transistors.
• 1995-2000: set up the epitaxy laboratory in Unipress (metalorganic chemical vapour phase epitaxy - MOVPE).
• 1980-1994: X-ray Diffraction (XRD) examinations of defects in GaAs, InP and GaN semiconductors. The main results of that period: i) observation of metastability of EL2-like defects (Ga-antisite in complex defect) induced by temperature and illumination, ii) determination of lattice parameters of GaAs and GaN as a function of doping.

Commercial activity

In 2001 assumed position of the VP of TopGaN Ltd., a company in Europe offering currently the following products:

• 380-390 nm laser diodes (LDs) for sensors and applications in stimulating the chemical reactions,
• 430-440 nm LDs for atomic clocks and other applications in Quantum Tech,
• High power arrays of LDs for copper welding,
• Master Oscillator Power Amplifiers for Quantum Tech and telecom applications.

The products are being developed in the frames of EU and UK projects with the Scottish, Italian and German enterprizes.